Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition
نویسندگان
چکیده
منابع مشابه
Raman scattering of ferroelectric lead lanthanum titanate thin films grown on fused quartz by metalorganic chemical vapor deposition
Highly textured lead lanthanum titanate (Pb1−xLax)TiO3 (PLT) thin films have been grown on fused quartz substrates by metalorganic chemical deposition (MOCVD). A series of PLT with different x between 0 and 0.32 were prepared and studied by Raman scattering. Raman spectra, measured at 300 K and 80 K, showed the features from the PLT film and quartz substrate. By using a “difference Raman” techn...
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PbxBa1−xTiO3 (0.2 x 1) thin films were deposited on single-crystal MgO as well as amorphous Si3N4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smal...
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Bismuth titanate (Bi,Ti,O,, :BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi20, was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H70)4] as a CVD source. The composition of films was controlled by changing RF power (P,,) of Bi,O, target and Ti source...
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Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N–H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga2O3. Si-dop...
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The influence of various deposition conditions (deposition temperature, partial oxygen pressure and solution composition) to the growth of ferroelectric PbTiO3 (PTO) films by pulsed liquid injection metalorganic chemical vapour deposition (MOCVD) was examined. Films were grown on LaAlO3 (001), SrTiO3 (001) and sapphire (R-plane) substrates. Pb(thd)2 and Ti(O i Pr)2(thd)2 (thd = 2,2,6,6-tetramet...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1993
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.353943